Metal-Organic Vapor Phase Epitaxy (MOVPE), also known as organometallic vapor phase epitaxy (OMVPE) or simply vapor phase epitaxy (VPE), is a chemical vapor deposition (CVD) technique used for growing crystalline thin films, particularly semiconductor materials. It is a key process in the fabrication of advanced electronic devices.
In MOVPE, a substrate is placed in a reaction chamber, which is then heated to an elevated temperature. A carrier gas, typically hydrogen or nitrogen, is introduced to create a controlled atmosphere. Organometallic or metal-organic precursors are delivered into the chamber, where they decompose at the heated surface of the substrate. The decomposition releases metal atoms that react with the substrate, leading to the growth of a thin film. The process allows precise control of the film's composition and structure.
MOVPE offers several advantages over other growth techniques, such as molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE). It allows simultaneous growth of multiple layers, making it suited for complex heterostructures. It also offers high growth rates, excellent material uniformity, and can be conducted at relatively low temperatures.
The versatility of MOVPE has enabled its widespread use in the production of compound semiconductors, including gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN). These materials find applications in various electronic and optoelectronic devices, such as transistors, lasers, light-emitting diodes (LEDs), and solar cells. MOVPE continues to be a central technique in semiconductor research and development, contributing to the advancement of many technological fields.
