FIBSEM, short for Focused Ion Beam Scanning Electron Microscopy, is a powerful imaging technique used in the field of nanotechnology and materials science. It combines two key technologies, a scanning electron microscope (SEM) and a focused ion beam (FIB), to provide detailed and high-resolution imaging capabilities along with precise material manipulation.
In FIBSEM, a highly focused beam of ions, often Gallium ions, is scanned across a sample surface. This ion beam can be used to selectively remove material, allowing for precise milling or cutting of samples with sub-micrometer resolution. Additionally, the ion beam can be employed to deposit or implant materials onto or into the sample, enabling precise material additions or modifications.
Simultaneously, an electron beam is used to scan the sample, capturing secondary electrons emitted from the surface. These electrons provide high-resolution, three-dimensional imaging of the sample's surface morphology. The SEM component allows for detailed characterization of sample structure, composition, and surface topography.
The combination of FIB and SEM enables a wide range of applications, including the fabrication and modification of nanoscale structures, imaging and analysis of materials at high resolution, as well as failure analysis and device prototyping. FIBSEM has found extensive use in various fields, including semiconductor research, materials development, and biological sciences, due to its versatility, precision, and imaging capabilities.
