The spelling of the term "colossal magnetoresistance" can be explained through IPA phonetic transcription. The word is pronounced as "kəˈlɒsəl mæɡˈniːtəʊrɪzɪstəns". The first syllable "colos" is pronounced with a short "o" sound, followed by stress on the second syllable "sal". The word "magnetoresistance" is pronounced with stress on the third syllable with a long "e" sound. The term refers to a property of certain metals and oxides to experience a significant change in electrical resistance in the presence of a magnetic field.
Colossal magnetoresistance (CMR) refers to a significant change in the electrical resistance of a material in response to an applied magnetic field. It is a phenomenon that occurs in certain materials known as CMR materials.
CMR materials are typically transition metal oxides that exhibit the property of ferromagnetism, which is the ability to exhibit a permanent magnetic moment. The most widely studied compound exhibiting CMR is a manganese oxide called manganite (La₁₋ₓSrₓMnO₃), but other materials such as cobaltites and vanadates also demonstrate similar behavior.
The essence of colossal magnetoresistance is an enormous drop in the electrical resistance of a CMR material when subjected to a magnetic field. Typically, these materials exhibit a relatively high resistance at room temperature, but at a specific temperature called the Curie temperature, their resistance drastically decreases when a magnetic field is applied. This behavior arises from the interplay between the magnetic and electronic properties of the material.
The underlying mechanism behind CMR is still a subject of active research, but it is believed to involve the alignment of the electron spins in response to the magnetic field, leading to a change in the electron mobility and scattering behavior. This change results in a tremendous decrease in the electrical resistance, which has potential applications in various fields, including spintronics, magnetic sensors, and magnetic memory devices.
Understanding and harnessing colossal magnetoresistance can open up avenues for technological advancements, as it offers the possibility of developing more efficient and sensitive devices that rely on the manipulation of electrons and magnetic properties.
The term "colossal magnetoresistance" (CMR) stems from combining two concepts: "colossal" and "magnetoresistance".
The word "colossal" comes from the Latin word "colossus", which means a giant statue. It is often used to depict something of enormous size or significance.
"Magnetoresistance" combines the words "magneto", referring to magnetism, and "resistance", which expresses the opposition to a flow of electric current. Magnetoresistance is a phenomenon where the electrical resistance of a material changes when subjected to a magnetic field.
Ultimately, combining the two terms gives rise to "colossal magnetoresistance", highlighting the significant change in resistance exhibited by certain materials when exposed to a magnetic field. This phenomenon was discovered in the 1990s and has since attracted considerable attention in the field of magnetism and applied physics due to its potential applications in electronics and data storage.