ALD is an acronym that stands for Atomic Layer Deposition. It refers to a thin-film deposition technique employed in the field of nanotechnology and surface engineering. ALD is a highly precise and controlled process used to deposit thin layers of materials on a substrate, typically at the atomic or molecular scale.
In ALD, the deposition of the material occurs one atomic layer at a time, allowing for excellent control over the film's thickness, uniformity, and composition. It involves the sequential exposure of the substrate to precursors, typically in vapor phase, which react and form a single atomic layer on the substrate surface. These precursor reactions take place in a chamber under vacuum conditions, enabling precise control of temperature, pressure, and reaction time.
ALD offers several advantages over other thin-film deposition techniques. Its self-limiting nature ensures highly-controlled growth, resulting in excellent conformity even on complex three-dimensional structures. The ability to deposit a wide range of materials, including metals, oxides, nitrides, and organic compounds, makes ALD highly versatile. The deposited films can exhibit unique properties such as high uniformity, conformality, scalability, and precise thickness control.
ALD finds diverse applications in various fields such as microelectronics, energy storage, catalysis, optics, and biomedical devices. It is particularly beneficial in manufacturing advanced semiconductor devices, nanoscale coatings, and nanoelectronics. The continuous advancements in ALD research and technology have led to its widespread adoption in numerous industries, contributing to the advancement of nanoscale engineering and the miniaturization of electronic devices.
